Retraction: Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays
نویسندگان
چکیده
منابع مشابه
Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays.
A multiferroic BiMnO3 nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO3/Ti structure at room temperature.
متن کاملRetraction: Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays.
Retraction of 'Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays' by Bai Sun and Chang Ming Li, Phys. Chem. Chem. Phys., 2015, 17, 6718-6721.
متن کاملRoom-temperature ferroelectric polarization in multiferroic BiMnO3
Single-phase multiferroic BiMnO3 ceramic was synthesized via high-pressure and high-temperature solid-state reaction. Microstructure modification accompanied by emergence of superlattice due to electron-beam irradiation was observed wherein by means of electron diffraction (ED) combined with high-resolution transmission electron microscopy (HRTEM). It was clearly evidenced that the well-establi...
متن کاملNon-Hebbian Learning Implementation in Light-Controlled Resistive Memory Devices
Non-Hebbian learning is often encountered in different bio-organisms. In these processes, the strength of a synapse connecting two neurons is controlled not only by the signals exchanged between the neurons, but also by an additional factor external to the synaptic structure. Here we show the implementation of non-Hebbian learning in a single solid-state resistive memory device. The output of o...
متن کاملSustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory
We report a new type of sustained and reversible unipolar resistive switching in a nanowire device made from a single strand of Cu:7,7,8,8-tetracyanoquinodimethane (Cu:TCNQ) nanowire (diameter <100 nm) that shows high ON/OFF ratio (~10(3)), low threshold voltage of switching (~3.5 V) and large cycling endurance (>10(3)). This indicates a promising material for high density resistive random acce...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Chemistry Chemical Physics
سال: 2017
ISSN: 1463-9076,1463-9084
DOI: 10.1039/c7cp90074k